Microchip Oxygen Sensor for Control of Internal Combustion Engines or Other Combustion Processes

ABSTRACT

A microchip oxygen sensor for sensing exhaust gases from a combustion process, and related methods. The microchip oxygen sensor includes a dielectric substrate and a heater pattern affixed to the substrate. A first electrode is affixed to the substrate and has a first plurality of fingers forming a first comb. A second electrode is affixed to the substrate and has a second plurality of fingers forming a second comb. The second electrode is disposed in spaced relation to the first electrode such that the first and second combs face each other. A semiconducting layer is disposed over the first and second electrodes so as form a physical semiconductor bridge between the first and second electrodes. The semiconducting layer comprises an n-type semiconducting material or a p-type semiconducting material. A porous dielectric protective layer, advantageously containing a catalytic precious metal, may cover the semiconducting layer.

This application is a continuation of U.S. patent application Ser. No.14/073,182, filed 6 Nov. 2013, which is a continuation of U.S. patentapplication Ser. No. 12/980,725, filed 29 Dec. 2010, now U.S. Pat. No.8,586,394, which claims the benefit of U.S. Provisional Application No.61/299,487, filed 29 Jan. 2010, the disclosures of each of which areincorporated by reference herein in their entirety.

BACKGROUND

The present invention relates to oxygen sensors for sensing exhaustgases in an internal combustion engine or in any combustion processwhere control of the air-fuel ratio is desired. Of particular usefulnessis the use of the sensors for control of small spark ignition enginessuch as those used in motorcycles, ATVs, recreational marineapplications and unmanned air vehicles. In addition, the sensor is alsosuitable for individual cylinder control in multi-cylinder engines andhybrid engines for automotive and off-road applications. This inventionmay also be used as a safety device to trigger an alarm and/or disablecombustion processes that produce rich exhaust gasses in enclosed spacesto prevent adverse conditions such as CO poisoning.

The utilization of closed loop control of internal combustion enginesfor reducing emissions and enhancing performance has gone through anevolutionary process since the 1970's with the replacement of carburetorbased systems with single port (monotronic) fuel injection controlled byutilizing the signal from an unheated oxygen sensor to determine theengine's air/fuel ratio. This has evolved into multi-port fuel injectionsystems with heated oxygen sensors. Currently, such technology from theautomotive industry is being applied to improve emission control insmall engines for motorcycle and off-road applications. However, thesesensors in their present state are cost prohibitive for a vast majorityof global applications.

Two major classes of oxygen sensors have been developed and havecompeted for the automotive market since the onset of closed-loopcontrol. Voltaic sensors rely on voltage generation due to a chemicalpotential across an ion conductor (stabilized zirconia) situated betweenthe exhaust gas and a reference gas, typically air, in accordance withthe Nernst equation, which is well known to those of ordinary skill.This type of sensor undergoes a step-wise change in voltage,transitioning across stoichiometry, due to an abrupt change in oxygenconcentration at that point.

A second type of sensor known as a resistive sensor relies on astep-wise change in resistance of a semiconductor material (typicallytitania-based) as exhaust gases transition across the stoichiometricboundary. Both classes of sensors must be heated to become functional.

Zirconia sensors have held the majority of market share, and as suchhave gone through the greatest evolutionary change. Initially, zirconiasensors were unheated and relied on the heat from exhaust gasses tobring them to a temperature at which they become functional. Heaterelements were later added to hasten sensor activation (light-off time),and increase the numbers of possible mounting locations along theexhaust stream. Further improvements have included the use of anintegrated heater with multi-layer packaging technology, i.e., a planarsensor.

More recently universal “wide-band” or “air/fuel” sensors have beendeveloped providing the ability to determine the air-fuel ratio awayfrom stoichiometry in a somewhat linear current vs. air-fuelrelationship, as compared to the step change in voltage at stoichiometryin earlier types of sensors. Unfortunately, these sensors are veryexpensive, have complicated circuitry, and the size reduction potentialis limited due to the need to have enough charge carriers to generate asignal. As such, they are therefore not suitable for the small enginemarket. By “small engine” is meant as defined by the EnvironmentalProtection Agency, “ . . . those products rated less than or equal to 19kilowatt (kW) (roughly equivalent to 25 horsepower [hp])” (Ref: Controlof Emissions from Marine SI and Small SI Engines, Vessels, andEquipment—Final Regulatory Impact Analysis. EPA420-R-08-014, September2008). This applies to single or multiple cylinder spark ignition orcompression ignition engines, Rotary (Wankel) engines, or any othermechanical device utilizing the combustion of a fuel to convert chemicalenergy to mechanical energy regardless of particular mechanical systememployed.

Resistive sensors by their nature can be reduced in size to a muchgreater extent than voltaic sensors. In accordance with the invention,this characteristic is used to make a sub-miniature “micro-chip” oxygensensor of particular usefulness in the small engine market. Theinvention also enables the possibility of individual cylinder control inmulti-port fuel injection systems for large spark ignition engines suchas automobiles. Another use is to provide a safety cut-off sensor toensure engines are not running rich and creating noxious gases.

SUMMARY

In accordance with one aspect of the invention, the sensor is made witha thin, typically, about 0.005″ to about 0.015″ in thickness, fullyfired or partially (bisque) fired ceramic substrate or wafer made upprimarily of aluminum oxide typically, i.e., about 94% to about 99.5% byweight, or other suitable dielectric material upon which multiple thinheater patterns for mass production of multiple sensor elements may beapplied. Examples of other suitable dielectric materials include but arenot limited to boron nitride, steatite (magnesium silicate), zirconiumtoughened alumina (ZTA), etc. These heater patterns are typically madeof platinum, palladium, a combination thereof, or other suitableconductive material having an appropriate resistivity for the specificapplication.

The heater patterns may be fired to a high enough temperature, ifnecessary, to ensure adhesion and/or to achieve a suitable resistancevalue depending on the application technique employed. This firing maybe delayed until later in the process. Typically, temperatures of about650° C. to about 1400° C. constitute a high enough temperature. One ormore dielectric layers is/are placed over this heater pattern toencapsulate and/or provide electrical isolation from the sensing portionof the sensor element to be applied in subsequent operations. Thisdielectric layer may also be fired to a suitable temperature to ensureadhesion and dielectric properties, if necessary, depending on theapplication technique employed. Typically, temperatures of about 650° C.to about 1400° C. constitute a high enough temperature.

Adjacent to this dielectric layer (either on top of or on the oppositeside of the substrate) are placed two intermeshing “comb-shaped”electrodes of platinum, palladium, a combination thereof, or othersuitable conductive material. Firing to a suitable temperature may benecessary depending on the application technique. An n or p typesemiconducting material such as but not limited to TiO₂ or Cr₂O₃ basedmaterials or other appropriate material is then applied to theelectrodes in such a way as to cover and bridge a gap in the spacesbetween the intermeshing combs of the comb-shaped electrodes, followedby firing to a temperature and an amount of time necessary to sinter andachieve desired functional characteristics of the sensor. Thesefunctional characteristics include resistance under rich conditions,resistance under lean conditions, switch times going from rich to leanand lean to rich conditions, resistance to chemical poisoning, and theaging behavior or stability of the sensor (changes in thesecharacteristics during the sensor's useful lifetime).

A porous protective dielectric layer may then be applied and fired to asuitable temperature sufficient to promote sintering and adhesion. By“porous” is meant sufficiently porous to allow the gases to readily passthrough to the semiconducting material while preventing abrasion andpoisoning. This protective layer may possess precious metal catalyticmaterials such as platinum, and/or palladium, and/or rhodium, as well asoxygen storage components such as cerium oxide or other suitablematerial as may be necessary to achieve the desired functionalcharacteristics of the sensor. These catalytic materials may be part ofthe composition of the protective layer, or added as to impregnate theprotective layer in a subsequent operation by applying a solventcontaining dissolved or colloidal catalytic materials such as platinum,palladium, rhodium or any other suitable impregnant. At the end of theseprocesses there results a wafer or substrate containing multiple oxygensensor elements (chips), which are then singulated, i.e., divided out assingle sensors via dicing, laser cutting, or other suitable techniquescommon to the semiconductor or electronics industry.

Each singulated chip element is then placed into an assembly, which issecured onto an exhaust system in such a way as to expose the sensingportion of the chip to exhaust gases. A voltage is applied to a heatercircuit on the chip to bring the element to a temperature sufficient toactivate the sensor. The resistance of the semiconducting portion of theelement decreases with increased temperature, and either increases as itis exposed to higher levels of oxygen or decreases with increasedoxygen, depending on the semiconducting material employed. Bymaintaining the element at an elevated temperature (above about 600° C.)the temperature effect is minimized and the condition of the exhaust gascan be determined by the step change in resistance at stoichiometry.

Four high temperature conductors are attached to the contact pads on thesensor element leading to wire connections that are connected to anelectronic control unit (ECU) of the engine of the type which isconventional and of the type well known to those of ordinary skill inthe art. The two wires from the heater circuit are used to apply asuitable voltage across the heater with one wire grounded (polarity doesnot matter) in order to heat the sensor to become active. Two wires fromthe sensor circuit of the chip element are connected to a circuit in theECU. In one embodiment the step-wise resistance change can be measureddirectly by the ECU. In another, two resistors in a voltage dividercircuit are used to enable the resistance changes in the sensor to beconverted to a voltage signal between about 1 volt (rich) and about 0volts (lean). This configuration enables matching the signalcharacteristics of conventional zirconia switching sensors. In reality,the signal is targeted to be slightly less than 1 volt and slightlygreater than 0 volts, typically on the order of about 0.900V to 0.750Vin rich condition to about −0.050V to 0.050V in the lean condition. Withthis measurement system configuration there is providedinterchangeability between control algorithms for this sensor andconventional zirconia switching sensors.

In one or more embodiments, the present invention provides a microchipoxygen sensor for sensing exhaust gases from a combustion process. Theoxygen sensor includes a dielectric substrate. A heater pattern isaffixed to the substrate. A first electrode is affixed to the substrateand has a first plurality of fingers forming a first comb. A secondelectrode is affixed to the substrate and has a second plurality offingers forming a second comb. The second electrode is disposed inspaced relation to the first electrode such that the first and secondcombs face each other. A semiconducting layer is disposed over the firstand second electrodes so as form a physical semiconductor bridge betweenthe first and second electrodes. The semiconducting layer comprises ann-type semiconducting material or a p-type semiconducting material. Aporous dielectric protective layer may cover the semiconducting layer.The porous dielectric protective layer may contain a catalytic preciousmetal. The substrate may be disposed between the first and secondelectrodes and the heater pattern. The heater pattern may be disposedbetween the first and second electrodes and the substrate, with anadditional dielectric layer disposed between the heater pattern andfirst and second electrodes. The combustion process may be associatedwith an internal combustion engine, with the heater pattern comprisingplatinum.

In one or more embodiments, the present invention provides a methodsensing oxygen in exhaust gases from a combustion process. The methodincludes simultaneously heating a substrate of a microchip oxygen sensorand passing current through a sensing circuit of the microchip oxygensensor; and also measuring a resistance of the oxygen sensing circuit.The heating the substrate involves passing a first current through aheater pattern affixed to the substrate. The sensing circuit includes afirst electrode, a second electrode, and a semiconducting layer. Thefirst electrode is affixed to the substrate and has a first plurality offingers forming a first comb. The second electrode is affixed to thesubstrate and has a second plurality of fingers forming a second comb.The second electrode is disposed in spaced relation to the firstelectrode such that the first and second combs face each other. Thesemiconducting layer is disposed over the first and second electrodes soas form a physical semiconductor bridge between the first and secondelectrodes. The passing the current through the sensing circuit involvespassing the current from the first electrode to the second electrode viathe semiconducting layer. The combustion process may occur in acombustion chamber of an engine, with the oxygen sensor exposed toexhaust gases from the engine. The engine may be a multi-cylinderengine. The measuring the resistance of the oxygen sensing circuit mayinclude applying a voltage to the oxygen sensor via a voltage dividercircuit contained in a wire harness connector operatively disposedbetween the oxygen sensor and an electronic control unit of the engine.The measuring the resistance of the oxygen sensing circuit may includeapplying a voltage to the oxygen sensor via a voltage divider circuitcontained in an electronic control unit of the engine. Thesemiconducting layer may include a p-type semiconducting material, andthe method may further include performing at least one of following inresponse to detecting rich exhaust gases based on a resistance of theoxygen sensor: generating an alarm and disabling the combustion process.

These and other advantages and features that characterize the inventionare set forth in the claims annexed hereto and forming a further parthereof. However, for a better understanding of the invention, and of theadvantages and objectives attained through its use, reference should bemade to the Drawings, and to the accompanying descriptive matter, inwhich there are described exemplary embodiments of the invention.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a schematic view of a ceramic substrate or wafer havingmultiple elements applied in a pattern suitable for singulation, i.e.,separate out single elements.

FIG. 2A and FIG. 2B are a schematic side view and perspective view,respectively, of a potential heater pattern having a predeterminedthickness to be applied as a first layer to the substrate of FIG. 1.

FIG. 3A and FIG. 3B are a schematic side view and perspective view,respectively, of one or more dielectric layer(s) to be applied over theheater pattern as a second layer on the wafer in FIG. 1, also having apredetermined thickness.

FIG. 4 is a schematic view of configuration for a potential electrode isa “comb” pattern, which is the third layer of the wafer of FIG. 1, to beapplied over the dielectric layer of FIG. 3 at a 90 degree orientationto the heater pattern of FIG. 2, or applied to the substrate on theopposite side of the heater pattern.

FIG. 5A and FIG. 5B are a schematic side view and perspective view,respectively, of semiconducting material of predetermined thickness tobe applied in a pattern over the electrodes of FIG. 4 in such a way asto bridge a gap between the combs, with the semiconductor pattern beingthe fourth layer on the wafer of FIG. 1.

FIG. 6A and FIG. 6B are a schematic side view and perspective view,respectively, of the porous dielectric protective layer to be appliedover the semiconducting layer, and is the fifth layer on the wafer ofFIG. 1.

FIG. 7A and FIG. 7B are a schematic view and an exploded perspectiveview, respectively, of a first individual element assembly, having theheater and the sensor circuits on the opposite sides of the elementsubstrate (chip).

FIG. 8A and FIG. 8B are a schematic side view and an explodedperspective view, respectively, of a second individual element assembly,having the heater and sensor circuits on the same side of the elementsubstrate (chip).

FIG. 9A-F are schematic views of an inner ceramic insulator upon whichthe element assembly with attached conductors of FIG. 10 is placed.

FIGS. 10A-E are schematic views of conductor terminals used to connectthe sensor element and heater circuits of FIG. 7A or 7B to wires leadingto the electronic engine/combustion control system.

FIG. 11A and FIG. 11B are a schematic end view and side view (in crosssection), respectively, of the element assembly of FIGS. 9A-F,positioned on the end of the inner ceramic insulator of FIGS. 8A-B, andhaving conductors terminals of FIGS. 10A-E attached to contact pads onthe element having heater and sensor circuit on opposite sides of theelement substrate (chip).

FIGS. 12A-D are schematic views of the element assembly of FIGS. 7A-B orFIGS. 8A-B, positioned on the end of the inner ceramic insulator, andhaving conductor terminals attached to contact pads on the elementhaving heater and sensor circuit on the same side of the elementsubstrate (chip).

FIGS. 13A-G are schematic views of a two-piece outer ceramic insulatorwhich is placed over the sub-assembly of FIGS. 8A-B.

FIGS. 14A-B are schematic views of the sub assembly containing theelement/conductor sub assembly of FIGS. 10A-E along with the insulatorsof FIGS. 9A-F.

FIGS. 15A-C are schematic views of a threaded metal housing.

FIGS. 16A-C are schematic views of an insulating disk having passagesthrough which conductors may pass.

FIG. 17 is a schematic side cross section view of the sensor assembly.

FIG. 18 is a schematic view of a sensor electrical connection includinga voltage divider circuit, which may be placed in a connector housing orin an electronic control unit, is used for sensing oxygen in exhaustgases.

FIG. 19 is a schematic view of the use of the invention in aone-cylinder engine application.

FIG. 20 is a schematic view of the current industry's use of oxygensensors in multi-cylinder engine applications.

FIG. 21 is a schematic view of the use of the invention inmulti-cylinder engine applications for individual cylinder control.

DETAILED DESCRIPTION

As shown in FIG. 1, for purposes of illustration only and notlimitation, the present invention includes a thin, typically about0.005″ to about 0.015″ thick ceramic substrate or wafer 11 madeprimarily of aluminum oxide in a ratio of about 94% to about 99.5% byweight, or other suitable dielectric material upon which multipleelements may be produced by first applying thin heater patterns composedof platinum, palladium, a combination thereof, and/or other suitablematerials, and placed thereon. Such suitable dielectrics include but arenot limited to boron nitride, steatite (magnesium silicate), zirconiumtoughened alumina (ZTA), etc. . . .

The heater patterns, as shown in FIG. 2, can be applied using physicalvapor deposition (electron beam or sputtering) or electroless plating,then masking using photolithography techniques followed by chemicaletching. Alternatively, the heater pattern 15 can be applied by firstmasking the substrate using photolithography techniques, then applyingthe platinum, palladium, or other suitable heater material using thetechniques described above and removing the mask to leave the heaterpatterns on the substrate. Typical thicknesses of this metal layermaking up the heater are between 25 and 1250 nm as needed to achievedesired resistance values. It is also understood by those familiar withthe art, that often a thin (5 to 15 nm thick) coating of titanium,vanadium or other suitable material may be applied between the metal(Pt, Pd, etc.) and adjacent layers (substrate, cover layers, etc.) toimprove adhesion. An example of a heater pattern 15 is illustrated inFIG. 2, but it need not be limited to such configuration. In oneembodiment, it may be suitable to fire the heater pattern to elevatedtemperatures of between about 650° C. and about 1450° C. and hold for0.25 to 6 hrs. at some point in the manufacturing process to improveadhesion and/or achieve desired electrical resistivity as a result ofsintering.

Following the application of the heater patterns 15, an electricallyinsulating layer 17 as shown in FIG. 3, and composed primarily of Al₂O₃or other suitable dielectric material is applied via screen printing,using Direct-Write Technology (DWT), ink-jet printing, or usingphotolithography masking and vapor deposition techniques or vapordeposition and etching techniques. Direct Write Technology involvesdispensing a liquid or a paste material (in this case dielectric in anorganic carrier) through a needle or other small orifice with the aid ofa computer controlled positioning and dispensing unit with depositioncontrol in three axes. Following the application of the insulatingdielectric layer 17, firing to an elevated temperature between about650° C. and about 1400° C. is performed as necessary to sinter and/orimprove adhesion.

The comb shaped electrodes 19 shown in FIG. 4 are preferably made ofplatinum, palladium, a combination thereof and/or other suitableconductor material. The electrodes are applied with the contact pads at90 degrees from the heater contact pads on either the same side of thesubstrate as the heater pattern, or on the opposite side. Theseelectrode patterns 19 are applied using photolithography masking andeither vapor deposition or electroless plating as is suitable. Followingapplication, photo resist is removed and the electrodes are fired at anelevated temperature of between about 650° C. and about 1400° C. andhold for 0.25 to 6 hrs. to improve adhesion and adjust electrodeconductivity.

An n-type or p-type semiconductor bearing material 21 such as TiO₂ orCr₂O₃ as shown in FIG. 5 is applied to the electrodes 19 to a suitablethickness typically between 5 and 150 microns to cover and bridge thegap between the combs of the electrodes 19. The material may be appliedas a paste using screen printing, ink-jet printing, or Direct WriteTechnology as is appropriate. Following application, the wafer is driedto a temperature of approximately 90 to 125° C. for 0.5 to 6 hrs. andfired to an elevated temperature between about 650° C. and about 1300°C. and hold for 0.25 to 6 hrs. to remove organic carrier materials,sinter, and improve adhesion. Alternatively, this layer may also beapplied using photolithography masking and vapor deposition techniques.

A porous dielectric paste material 23 as shown in FIG. 6 which iscomposed of organic carriers common in the printing industry, withsolids such as Aluminum Oxide based compositions, or spinel (magnesiumalum inate) is applied over the semiconducting material using, screenprinting, ink-jet printing, or Direct Printing Technology to a thicknessof between about 5 and about 150 microns. Following the application ofthis material it is dried at temperatures of approximately 90 to 125° C.for 0.5 to 6 hrs., then fired to a temperature between about 650° C. andabout 1100° C. and held for 0.25 to 6 hrs. This material may possesscatalytic materials such as platinum, and/or palladium, and/or rhodium,and/or an oxygen storage component such as Ce₂O₃ in concentrationssuitable to achieve the desired functional behavior of the sensor.Alternatively, these catalytic materials may be applied after firingusing an impregnant applied manually or robotically using a syringe orapplied using Direct Printing Technology.

FIGS. 7 and 8 are schematic views of two versions of complete sensorelements 25 and 27 with all layers illustrated. As may be appreciatedfrom the foregoing discussion, the main components of the sensor havebeen discussed and illustrated. However, as will be readily apparent tothose of ordinary skill, for the platinum layer it may be desirable toadd a thin layer, typically about 5 to about 15 nanometers, of titanium(optional) or vanadium or other pure suitable material to both sides ofeach platinum layer to promote adhesion to the aluminum oxide layer.Thus, a typical sequential arrangement of layers is as follows:

Version 1 Version 2 Item (FIG. 7) (FIG. 8) Aluminum oxide substrate (11)Side A Side A Titanium Side A Side A Platinum heater (15) Side A Side ATitanium Side A Side A Dielectric (17) Side A Side A Titanium Side BSide A Platinum electrode (19) Side B Side A Titanium Side B Side ASemiconductor (21) Side B Side A Porous Cover Layer (23) Side B Side A

The sensor assembly 29 is now described. As shown in FIG. 9, on the tipof the inner ceramic part, there is a recess whose length and width isslightly larger than the element chip, and whose depth is slightlysmaller than the chip to allow for positioning and securing the chip inthe assembly and allowing for typical dimensional tolerances found inproduction. There is also a gap along the centerline of the innerceramic to avoid contact of the center portion of the chip to promotethermal isolation immediately adjacent to the heated portion in thecenter of the chip. The element chip of FIG. 7 is positioned on thecenter of the end of the inner ceramic in the recess. Current carryingconductors or terminals 39 of FIG. 10 made of materials suitable for theoperating environment, i.e., the temperature and exhaust gas atmosphere(ex.: Inconel 600, Inconel 625, etc. . . . ), are then attached to thefour contact pads of the chip and commuted through the grooves in theouter edges of the inner ceramic as shown in FIGS. 11 and 12. FIG. 11also shows a sensor side 49 and heater side 51. Securing terminals tothe contact pads for improved electrical contact may be achieved using ahigh temperature conductive paste (Pt, Pd, etc.), high temperaturebrazing, laser welding, or may simply be done by providing a mechanicalcontact assembly. This sub assembly is then inserted into a two-pieceouter insulator of FIG. 13, which has a hole for exhaust gases to reachthe sensing portion of the chip as shown in FIG. 14.

This outer ceramic insulator 101, 103 of FIG. 13 also providesmechanical security and electrical insulation for the conductiveterminals. There are two outer diameters on the first outer ceramic part101 which will be used to seat the ceramic sub-assembly in a metalhousing of FIG. 15. The second outer ceramic 103 is a bushing having thesame inner diameter, and the larger outer diameter of the first part.The sensor element 13, an inner insulator 107, heater terminals 105,signal terminals 109, and inner insulator 111 are also shown. This metalhousing or “shell” shown in FIG. 15 has an internal transition feature,which mates to the outer ceramic part and has a suitable standard threadand hexagonal faces of suitable size for installation into an exhaustpipe. The ceramic sub-assembly is placed into the shell, small amountsof high temperature potting material are placed around each conductor,and a thin round ceramic wafer or disk of FIG. 16 having holes ofappropriate geometry is then placed over the conductors and pushed intoplace against the end of the two concentric ceramic parts. The back endof the shell is then crimped to secure all components of the assembly asshown in FIG. 17. This assembly shows an outer shell 203 and cement seal201. This assembly may require further heat treatment as may benecessary to cure the potting material used for sealing.

The circuitry of the invention may be used for a number of applications.The oxygen sensor may be used for engine control. In one illustrativeembodiment, FIG. 18 illustrates a sensor along with a voltage dividercircuit that may or may not be employed depending upon the particularapplication. This voltage divider circuit can be physically locatedeither in an electronic control unit or in a harness connector as may beappropriate for the application. It may also be incorporated in thesensor assembly or on the sensor element itself; however, this may notbe practical due to the high temperatures reached in the sensor mayadversely influence the resistance values of the voltage divider overtime. The material chosen for the element sensor resistor (R_(s)) ischosen to be an n-type material which increases in resistance withincreasing oxygen in exhaust gases. A voltage, V, typically betweenabout 5V and about 18V is applied to the heater circuit (R_(h)) to heatthe sensor element resistor (R_(s)) to a temperature at which the sensorbecomes active, such that the sensor circuit resistance responds tochanges in the level of oxygen in the exhaust gas. That same voltage maybe applied to voltage divider circuit (R₁/R_(s)/R₂), or a separate anddifferent voltage may be applied. Signal stability and therefore,performance is improved by regulating the voltage applied to thiscircuit to a stable level. The ratio of R₂ to R₁ is chosen based uponthe applied voltage, and is typically the same as or near the appliedvoltage (e.g., 12:1 for 12 volts, 14:1 for 14 volts, etc. . . . ). Thevalue chosen for R₂ (and therefore R1 also) is dependent upon the systemsuch that the voltage measured in the lean condition stays below thetarget value, typically <100 mV, for the particular system. Both ofthese values are dependent upon the resistive characteristics of theelement under the operating conditions, therefore the location of thesensor in the exhaust stream may have an impact on the resistance valueschosen.

FIG. 19 illustrates a use of the device of the invention for enginecontrol for a one (1) cylinder engine, for example, for a motorcycle.FIG. 20 illustrates engine control in a multi-cylinder environmentaccording to the prior art where one oxygen sensor controls four (4)cylinders using an averaging effect. FIG. 21 illustrates a use of thedevice of the invention wherein one (1) oxygen sensor is provided percylinder in a multi cylinder engine providing individual cylindercontrol.

The device may also be used as a safety switch. More specifically, inanother embodiment, the invention may be used as a safety switch forengines designed to run lean in an enclosed environment to prevent thegeneration of toxic gases such as CO. By selecting a p-typesemiconducting material, e.g., Cr₂O₃, instead of an n-type material,e.g., TiO2, the resistance is low in lean exhaust environments and highin rich exhaust gas environments. For instance, many propane powereddevices (floor buffers, burnishers, Zamboni™, etc.) require a sensor todetect when the engine begins to run rich creating, carbon monoxide andother noxious gases this sensor would be used to sense the conditiontriggering an engine shut-down and/or an alarm. Some companies useoxygen sensors for this purpose; however, they are not well suited forthese applications as they are too large and expensive. A voltagedivider circuit may or may not be employed depending on the particularapplication.

The ability to produce these sensors in very small sizes (micro-chipsize) with significant reduction in cost of production along with thegreatly reduced power requirements as compared to conventional oxygensensors used in the automotive industry makes this technology ideallysuited for the motorcycle and small engine markets. Additionally, thesesame features provide an opportunity for utilizing one sensor percylinder on multi-cylinder applications, e.g., automobiles andcompressed natural gas power generators, for individual cylinder controlemission strategies.

While the present invention has been illustrated by a description ofvarious embodiments and while these embodiments have been described inconsiderable detail, it is not the intention of the Applicant torestrict, or any way limit the scope of the appended claims to suchdetail. The invention in its broader aspects is therefore not limited tothe specific details, representative apparatus and method, anillustrative example shown and described. Accordingly, departures may bemade from such details without departing from the spirit or scope ofApplicant's general inventive concept.

What is claimed is:
 1. A microchip oxygen sensor for sensing exhaustgases from a combustion process, comprising: a dielectric substrate; aheater pattern affixed to the substrate; a first electrode affixed tothe substrate and having a first plurality of fingers forming a firstcomb; a second electrode affixed to the substrate and having a secondplurality of fingers forming a second comb, the second electrodedisposed in spaced relation to the first electrode such that the firstand second combs face each other; an n-type semiconducting layerdisposed over the first and second electrodes so as form a physicalsemiconductor bridge between the first and second electrodes; whereinthe semiconducting layer comprises an n-type semiconducting material; aporous dielectric protective layer covering the semiconducting layer,wherein the porous dielectric protective layer contains a catalyticprecious metal; wherein the substrate, electrodes, semiconducting layer,and protective layer are disposed in stacked order such that: the firstand second electrodes are in direct contact with the semiconductinglayer; the semiconducting layer is physically isolated from thesubstrate by electrodes; the protective layer is physically isolatedfrom the combs of the electrodes by the semiconducting layer.
 2. Themicrochip oxygen sensor of claim 1, wherein the substrate is disposedbetween the first and second electrodes and the heater pattern, andwherein the first and second electrodes are in direct contact with thesubstrate.
 3. The microchip oxygen sensor of claim 1: wherein the heaterpattern is disposed between the first and second electrodes and thesubstrate; further comprising an additional dielectric layer disposedbetween the heater pattern and first and second electrodes.
 4. Themicrochip oxygen sensor of claim 1, wherein the combustion process isassociated with an internal combustion engine; wherein the heaterpattern comprises platinum.
 5. The microchip oxygen sensor of claim 1,wherein the substrate is homogeneous.
 6. A microchip oxygen sensor forsensing exhaust gases from a combustion process, comprising: adielectric substrate; a heater pattern affixed to the substrate; a firstelectrode affixed to the substrate and having a first plurality offingers forming a first comb; a second electrode affixed to thesubstrate and having a second plurality of fingers forming a secondcomb, the second electrode disposed in spaced relation to the firstelectrode such that the first and second combs face each other; a p-typesemiconducting layer disposed over the first and second electrodes so asform a physical semiconductor bridge between the first and secondelectrodes; wherein the semiconducting layer comprises a p-typesemiconducting material; a porous dielectric protective layer coveringthe semiconducting layer, wherein the porous dielectric protective layercontains a catalytic precious metal; wherein the substrate, electrodes,semiconducting layer, and protective layer are disposed in stacked ordersuch that: the first and second electrodes are in direct contact withthe semiconducting layer; the semiconducting layer is physicallyisolated from the substrate by electrodes; the protective layer isphysically isolated from the combs of the electrodes by thesemiconducting layer.
 7. The microchip oxygen sensor of claim 6, whereinthe substrate is disposed between the first and second electrodes andthe heater pattern, and wherein the first and second electrodes are indirect contact with the substrate.
 8. The microchip oxygen sensor ofclaim 6: wherein the heater pattern is disposed between the first andsecond electrodes and the substrate; further comprising an additionaldielectric layer disposed between the heater pattern and first andsecond electrodes.
 9. The microchip oxygen sensor of claim 6, whereinthe combustion process is associated with an internal combustion engine;wherein the heater pattern comprises platinum.
 10. The microchip oxygensensor of claim 6, wherein the substrate is homogeneous.
 11. A method ofsensing oxygen in exhaust gases from a combustion process, comprising:simultaneously heating a substrate of a microchip oxygen sensor andpassing current through a sensing circuit of the microchip oxygensensor; measuring a resistance of the oxygen sensing circuit; whereinthe heating the substrate comprising passing a first current through aheater pattern affixed to the substrate; wherein the sensing circuitcomprises: a first electrode affixed to the substrate and having a firstplurality of fingers forming a first comb; a second electrode affixed tothe substrate and having a second plurality of fingers forming a secondcomb, the second electrode disposed in spaced relation to the firstelectrode such that the first and second combs face each other; asemiconducting layer disposed over the first and second electrodes so asform a physical semiconductor bridge between the first and secondelectrodes; wherein passing the current through the sensing circuitcomprises passing the current from the first electrode to the secondelectrode via the semiconducting layer; wherein the microchip oxygensensor is disposed in an exhaust gas stream during the heating, thepassing current, and the measuring; wherein the microchip oxygen sensorcomprises the heater pattern, the first and second electrodes, and thesemiconducting layer; wherein the microchip oxygen sensor furthercomprises a porous dielectric protective layer covering thesemiconducting layer, wherein the porous dielectric protective layercontains a catalytic precious metal; wherein the substrate, electrodes,semiconducting layer, and protective layer are disposed in stacked ordersuch that: the first and second electrodes are in direct contact withthe semiconducting layer; the semiconducting layer is physicallyisolated from the substrate by electrodes; the protective layer isphysically isolated from the combs of the electrodes by thesemiconducting layer. wherein the method further comprises passing someof the exhaust gas through the protective layer to reach the electrodes.12. The method of claim 11, wherein the combustion process occurs in acombustion chamber of an engine, and wherein the microchip oxygen sensoris exposed to exhaust gases from the engine.
 13. The method of claim 12,wherein the engine is a multi-cylinder engine.
 14. The method of claim12, wherein the measuring the resistance of the oxygen sensing circuitcomprises applying a voltage to the oxygen sensor via a voltage dividercircuit contained in a wire harness connector operatively disposedbetween the microchip oxygen sensor and an electronic control unit ofthe engine.
 15. The method of claim 14, wherein the measuring theresistance of the oxygen sensing circuit comprises applying a voltage tothe microchip oxygen sensor via a voltage divider circuit contained inan electronic control unit of the engine.
 16. The method of claim 11:wherein the semiconducting layer comprises a p-type semiconductingmaterial; further comprising performing at least one of following inresponse to detecting rich exhaust gases based on a resistance of themicrochip oxygen sensor: generating an alarm; disabling the combustionprocess.
 17. The method of claim 11, wherein the semiconductor layercomprises an n-type semiconducting material.
 18. The method of claim 11,wherein the semiconductor layer comprises an p-type semiconductingmaterial.